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AI Glossary

The complete dictionary of Artificial Intelligence

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2,032
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23,060
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RRAM

Resistive random-access memory based on memristor properties to store information by modifying the resistance of a dielectric material.

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Synaptic conductance

Electrical parameter in neuromorphic circuits that simulates the connection strength between neurons by adjusting the memristor's conductance according to electrical activity.

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Memristance

Fundamental property of a memristor characterizing its variable resistance that depends on the history of current that has passed through the component.

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Resistive hysteresis

Phenomenon where the resistance of a memristor depends not only on the applied voltage but also on its previous state, creating a characteristic hysteresis cycle.

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Conductive filament

Metallic or oxidized microstructure formed in the dielectric of a memristor by ion migration, creating a localized and reversible conduction path.

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Resistance state

Quantized configuration of a memristor's resistance (HRS or LRS) representing logical states or synaptic weights in neuromorphic applications.

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Electrochemical switching

Resistance change mechanism in memristors based on ion migration and redox reactions under the effect of an electric field.

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Metallic dendrite

Branched metal structure formed by electrodeposition in the dielectric of a memristor, responsible for the abrupt conductance change between states.

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Metal Oxide Memristor

Type of memristor using metal oxides such as HfO₂, TiO₂ or Ta₂O₅ as dielectric to achieve reliable resistive switching properties.

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In-Memory Computing

Architectural approach where computations are performed directly in memory cells (memristors), eliminating the von Neumann bottleneck between processor and memory.

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Non-volatile electronics

Technology based on memristors that allows maintaining logical state without continuous power supply, essential for autonomous neuromorphic systems.

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Forming voltage

Initial voltage required to activate a new memristor by creating the first conductive filament, a prerequisite for its normal operation.

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SET/RESET operations

Programming procedures of memristors where SET switches to low resistance state and RESET to high resistance state, simulating synaptic plasticity.

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